Reactive Group Solid State Disks Ltd SCSIFLASH Arraid, LLC

SanDisk® iNAND™ Ultra

A small, power-efficient flash drive, iNAND Ultra™ provides up to 64GB**1 GB = 1,000,000,000 bytes. Actual user capacity less. of storage and fast read/write speeds.


Manufacturer: SanDisk

Product Details

iNAND Ultra is built on SanDisk's 19 nanometer (nm) process—the world's most advanced semiconductor manufacturing process—and is designed for use in next-generation tablets, smartphones and other mobile devices.

Benefits include:

  • Excellent user experience
  • Easy application swapping and multitasking
  • Smooth Web browsing and streaming
  • Low power consumption

Overview

Intelligent Flash Memory

iNAND EFDs utilize intelligent flash memory technology that not only offers the capacity to store digital content, but also meets even stricter high sequential and random performance requirements to ensure a strong user experience—enabling quick application launching, seamless multi-tasking, imaging needs and quick access to the cloud.

Cost-Effective Architecture
iNAND Ultra EFDs use highly advanced caching technology that increases system responsiveness and burst performance for faster application loading, Web browsing, and multitasking. With the cost effective architecture implemented the iNAND Ultra comes at a significantly lower cost-per-bit and is a good choice for cost efficiency.

More Compact, More Mobile
iNAND Ultra versatile, space-efficient form factors make slim and portable mobile, tablet, and consumer electronics designs possible. Smaller EFDs mean more space for batteries, cameras, and memory—as well as design innovation. iNAND Ultra is available in highly compact JEDEC e.MMC-compliant packages, packing up to 64GB**1 GB = 1,000,000,000 bytes. Actual user capacity less. of memory in a 11.5mm by 13mm form factor with heights as low as 1.0mm.

Features

  • Support burst mode
  • Improved latency
  • EXT4 optimization
  • Reduced system latency
  • Multi-stream detection
  • High-priority interrupt

Specifications

  • Capacity: 4GB-64GB**1 gigabyte-1 billion bytes. Some capacity not available for data storage.
  • Interface: 4GB-16GB**1 GB = 1,000,000,000 bytes. Actual user capacity less. e.MMC 4.51 HS200
  • Sequential W/R: : Up to 30/120 MB/s**SanDisk proprietary test environment; measured with a chunk size of 4KB and address range of 100MB.
  • Random W/R: Up to 500/4K IOPS**SanDisk proprietary test environment; measured with a bus width of 8 bit at 200 MHz, chunk size of 512KB, and data transfer of 1GB.
  • Interface:8GB-64GB**1 GB = 1,000,000,000 bytes. Actual user capacity less. e.MMC 4.41+
  • Sequential W/R: : Up to 24/90 MB/s**SanDisk proprietary test environment; measured with a chunk size of 4KB and address range of 100MB.
  • Random W/R: Up to 300/2.8K IOPS**SanDisk proprietary test environment; measured with a bus width of 8 bit at 200 MHz, chunk size of 512KB, and data transfer of 1GB.
  • Packaging

Warranty

1 year warranty for Americas, Japan, PacRim
2 year warranty for EMEA

Part Numbers

Ordering Information (for all regions)

Part Numbers

SDIN7DP2-4G

SDIN7DP2-8G

SDIN7DU2-8G

SDIN7DU2-16G

SDIN7DU2-32G

SDIN7DU2-64G

SDIN8DR1-8G

SDIN8DR1-16G

Description

SDIN7DP2-4G,153FBGA 11.5X13 e.MMC 4.51

SDIN7DP2-8G,153FBGA 11.5X13 e.MMC 4.51

SDIN7DU2-8G,TFBGA 11.5X13,Generic e.MMC 4.51

SDIN7DU2-16G,TFBGA 11.5X13,SDSS e.MMC 4.51

SDIN7DU2-32G,VFBGA 11.5x13 SDSS e.MMC 4.51

SDIN7DU2-64G,VFBGA 11.5x13 SDSS e.MMC 4.51

SDIN8DR1-8G,VFBGA 11.5x1x1.0,Generic e.MMC 4.51 + HS200 1ynm

SDIN8DR1-16G,VFBGA 11.5x1x1.0,Generic e.MMC 4.51 + HS200 1ynm

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